Characterization and modeling of stacked MIM on‐chip capacitors with high‐capacitance density up to 20 GHz frequency region

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13 March 2009

journal article
research article
Published by Wiley in Microwave and Optical Technology Letters

Vol. 51 (5) , 1235-1238
DOI:10.1002/mop.24305

Abstract

In this article, double‐stacked and triple‐stacked metal‐insulator‐metal (MIM) capacitors fabricated in 0.18 μm CMOS process are reported. These provide high‐capacitance density of 2 fF/μm² and 3.2 fF/μm² and excellent dc and RF characteristics, respectively. The lumped circuit model of the stacked MIM capacitors is presented for high‐frequency applications up to 20 GHz. The stacked MIM capacitors offer a reduced chip area for a given capacitance value and are expected to be a viable choice for integration of RF/mixed‐mode circuits in a single chip. © 2009 Wiley Periodicals, Inc. Microwave Opt Technol Lett 51: 1235–1238, 2009; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.24305

Keywords

Funding Information

Pusan National University research grant

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