Origin of the ‘S-shaped’ temperature dependence of luminescent peaks from semiconductors
Authors:
- Q LiQLQ Li
- S J XuSXS J Xu
- M H XieMXM H Xie
- S Y TongSTS Y Tong
- 15 July 2005
- journal article
- Published by IOP Publishing in Journal of Physics: Condensed Matter
- Vol. 17 (30) , 4853-4858
Abstract
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This publication has 20 references indexed in Scilit:
- Structural and Optical Characteristics of InGaN/GaN Multi-Quantum Wells Grown on a - and c -Plane Sapphire SubstratesChinese Physics Letters, 2004
- Exciton freeze-out and thermally activated relaxation at local potential fluctuations in thick AlxGa1−xN layersJournal of Applied Physics, 2004
- Effect of nitrogen on the optical and transport properties of Ga0.48In0.52NyP1−y grown on GaAs(001) substratesApplied Physics Letters, 2003
- Temperature-dependent emission intensity and energy shift in InGaN/GaN multiple-quantum-well light-emitting diodesApplied Physics Letters, 2003
- Evidence of strong carrier localization below 100 K in a GaInNAs/GaAs single quantum wellApplied Physics Letters, 2000
- “S-shaped” temperature-dependent emission shift and carrier dynamics in InGaN/GaN multiple quantum wellsApplied Physics Letters, 1998
- “Blue” temperature-induced shift and band-tail emission in InGaN-based light sourcesApplied Physics Letters, 1997
- Photoluminescence and photoluminescence excitation spectroscopy of Al0.48In0.52AsJournal of Applied Physics, 1993
- Temperature dependence of the dielectric function of germaniumPhysical Review B, 1984
- Temperature dependence of the energy gap in semiconductorsPhysica, 1967