Pseudomorphic Structure at the Interface of Ge on Si(111) Studied by High-Energy-Ion Scattering
Authors:
- 16 November 1981
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 47 (20) , 1459-1462
Abstract
Megaelectronvolt ion scattering is applied to a study of the initial stage of heteroepitaxy of the Ge/Si(111) system and it is shown that the interface is uniform and pseudomorphic at first, after which island formation takes place and strains are introduced at the interface. This change occurs after deposition of a threshold film thickness of ∼ 3 monolayers. More than 10 monolayers are distorted at the interface after deposition of about 30 monolayers of germanium.Keywords
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