Unveiling the reliability of negative capacitance FinFET with confrontation of different HfO2-ferroelectric dopants

This publication has 20 references indexed in Scilit:

• Trap and self-heating effect based reliability analysis to reveal early aging effect in nanosheet FET
  Solid-State Electronics, 2022
• Reliability of TCAD study for HfO2-doped Negative capacitance FinFET with different Material-Specific dopants
  Solid-State Electronics, 2022
• Demonstration of High-speed Hysteresis-free Negative Capacitance in Ferroelectric Hf0.5Zr0.5O2
  2018
• Reliability characterization of 10nm FinFET technology with multi-VT gate stack for low power and high performance
  2016
• Designing energy efficient and hysteresis free negative capacitance FinFET with negative DIBL and 3.5X ION using compact modeling approach
  2016
• High performance 14nm SOI FinFET CMOS technology with 0.0174µm ² embedded DRAM and 15 levels of Cu metallization
  2014
• Ferroelectricity in yttrium-doped hafnium oxide
  Journal of Applied Physics, 2011
• Ferroelectricity in hafnium oxide thin films
  Applied Physics Letters, 2011
• Use of Negative Capacitance to Provide Voltage Amplification for Low Power Nanoscale Devices
  Nano Letters, 2007
• A physically based mobility model for numerical simulation of nonplanar devices
  IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 1988