Low-cost technique for preparing n-Sb2S3/p-Si heterojunction solar cells
Authors:
- 12 July 1993
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 63 (2) , 228-230
Abstract
The first fabrication of low cost n-Sb2S3/p-Si heterojunction solar cells by chemical deposition method is reported. It is observed that in the case of n-Sb2S3 films chemically deposited with silicotungstic acid on p-Si and annealed, the photovoltaic properties of the n-Sb2S3/p-Si junctions are considerably improved. Under AM1 illumination, the improved junction exhibited an efficiency (η) of ∼5.19% on an active area of 0.05 cm2 without any antireflection coating whereas the n-Sb2S3 films deposited without STA on p-Si showed η=1.03%.Keywords
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