Two-dimensional transient simulations of the self-heating effects in GaN-based HEMTs
Authors:
- Yamin ZhangYamin Zhang
- Shiwei FengSFShiwei Feng
- Hui ZhuHZHui Zhu
- Jianwei ZhangJZJianwei Zhang
- Bing DengBDBing Deng
- 1 May 2013
- journal article
- Published by Elsevier in Microelectronics Reliability
- Vol. 53 (5) , 694-700
Abstract
No abstract availableKeywords
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