Femtosecond Orientational Relaxation of Photoexcited Carriers in GaAs
Authors:
- 23 July 1984
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 53 (4) , 384-387
Abstract
The anisotropy of optical absorption saturation by intense linearly polarized light pulses is measured with subpicosecond resolution in GaAs at 77 K, at a photon energy slightly above the band gap. For an electron-hole pair density of about 6× , the momentum orientational relaxation time is determined to be 190 fs, most likely due to carrier-carrier scattering.
Keywords
This publication has 9 references indexed in Scilit:
- Wavelength dependence of picosecond absorption saturation in gallium arsenideSolid State Communications, 1984
- Femtosecond Relaxation of Photoexcited Nonequilibrium Carriers inPhysical Review Letters, 1983
- Numerical approach to non-equilibrium carrier relaxation in picosecond and subpicosecond physicsPhysics Letters A, 1983
- Picosecond Optically Induced Anisotropic State Filling in SemiconductorsPhysical Review Letters, 1982
- Spectrum and polarization of hot-electron photoluminescence in semiconductorsUspekhi Fizicheskih Nauk, 1982
- Picosecond coherence coupling in the pump and probe techniqueOptics Communications, 1981
- Direct Measurement of Hot-Electron Relaxation by Picosecond SpectroscopyPhysical Review Letters, 1979
- Dynamics of Photoexcited GaAs Band-Edge Absorption with Subpicosecond ResolutionPhysical Review Letters, 1979
- Doppler-Free Laser Polarization SpectroscopyPhysical Review Letters, 1976