Effect of nucleation layer on the magnetic properties of GaMnN
- 1 April 2004
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 84 (14) , 2578-2580
Abstract
The effects of nucleation layer and growth temperature on the magnetic properties of GaMnN have been investigated. It was found that the largest magnetic moment was measured in films prepared on metalorganic chemical vapor deposition (MOCVD) GaN buffers at a growth temperature of 700 °C. Extended x ray absorption fine structure measurements indicate that the improved magnetic quality of the films grown on MOCVD layers versus gas source molecular beam epitaxy nucleation layers is not due to a change in the lattice position of the Mn and is more likely due to a reduction in defect density. Growth temperature was also found to have a significant impact on the magnetic properties, with the optimal growth temperature found to be 700 °C.Keywords
This publication has 25 references indexed in Scilit:
- Origin of high-temperature ferromagnetism in (Ga,Mn)N layers grown on 4H–SiC(0001) by reactive molecular-beam epitaxyApplied Physics Letters, 2003
- Hydrogenation Effects on Magnetic Properties of GaMnPElectrochemical and Solid-State Letters, 2003
- Wide band gap ferromagnetic semiconductors and oxidesJournal of Applied Physics, 2003
- Reduction of Spin Injection Efficiency by Interface Defect Spin Scattering in Spin-Polarized Light-Emitting DiodesPhysical Review Letters, 2002
- Electronic structure, magnetic ordering, and optical properties of GaN and GaAs doped with MnPhysical Review B, 2002
- Electronic structure and spin polarization of Mn-containing dilute magnetic III-V semiconductorsPhysical Review B, 2001
- Spintronics: A Spin-Based Electronics Vision for the FutureScience, 2001
- Magnetic and structural properties of Mn-implanted GaNApplied Physics Letters, 2001
- SpintronicsAmerican Scientist, 2001
- MagnetoelectronicsScience, 1998