Direct electro-optic sampling of GaAs integrated circuits

Authors:

15 August 1985

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 21 (17) , 765-766
DOI:10.1049/el:19850539

Abstract

We report the first electro-optic sampling measurements made directly within an integrated circuit. Using the electro-optic effect in GaAs, we have noninvasively probed the internal voltage waveforms of a 2–12 GHz GaAs FET travelling-wave amplifier integrated circuit driven by a microwave signal source.

Keywords

ELECTRO-OPTIC SAMPLING
MICROWAVE SIGNAL SOURCE
GAAS INTEGRATED CIRCUITS
2 GHZ TO 12 GHZ
NONINVASIVE PROBE MEASUREMENT
IC TESTING
SHF
ND:YAG LASER
INTERNAL VOLTAGE WAVEFORMS
MMIC
MONOLITHIC MICROWAVE IC
FET TRAVELLING-WAVE AMPLIFIER

This publication has 1 reference indexed in Scilit:

Electro-Optic Sampler For Gallium Arsenide Integrated Circuits
1985