Effect of annealing temperature on the electrical performances of solution-processed InGaZnO thin film transistors
Authors:
- Sooyeon HwangSHSooyeon Hwang
- Ju Ho LeeJLJu Ho Lee
- Chang Ho WooCWChang Ho Woo
- Jeong Yong LeeJLJeong Yong Lee
- Hyung Koun ChoHyung Koun Cho
- 1 May 2011
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 519 (15) , 5146-5149
Abstract
No abstract availableFunding Information
- National Research Foundation of Korea (2010-0002231)
- Ministry of Education, Science and Technology (2008-314-D00153, 2009-0078876)
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