Enhanced thermal conductivity of polycrystalline aluminum nitride thin films by optimizing the interface structure
- 15 August 2012
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 112 (4) , 044905
Abstract
The growth-temperature dependency and interface structure effects on the thermal conductivity of the highly textured AlN thin films on (001) Si substrates were systematically studied by characterizing the crystal structures, surface morphologies, interface structures, chemical compositions, and thermal conductivity using x-ray diffraction analysis, atomic force microscopy, high resolution transmission electron microscopy, x-ray photoelectron spectroscopy, and 3-omega method, respectively. By optimizing the interface microstructure and the growth temperature, thermal conductivity of polycrystalline AlN thin films can be greatly enhanced from 9.9 to 26.7 W/mK, when the growth temperature increases from 330 to 560 °C. This achievement is considered to be associated with the diminishment of the amorphous and disordered layer at the AlN/Si interface.Keywords
Funding Information
- National Natural Science Foundation of China (11028409, 51002023, 60976061)
- National Basic Research Program of China (2011CB301705,)
- Fundamental Research Funds for the Central Universities (China) (ZYGX2009Z0001, ZYGX2011J028)
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