1.54-μm photoluminescence from Er-implanted GaN and AlN
Authors:
- 22 August 1994
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 65 (8) , 992-994
Abstract
We report the observation of the 1.54‐μm luminescence of optically excited Er3+ in ion‐implanted epitaxially grown GaN and AlN films using below band‐gap excitation. The Er‐implanted layers were co‐implanted with oxygen. At room temperature, this luminescence for GaN grown on sapphire is nearly as intense as it is at 6 or 77 K and exhibits many resolved transitions between crystal‐field levels of the 4I13/2 first excited multiplet and the 4I15/2 ground multiplet.Keywords
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