Room-Temperature and Tunable Tunneling Magnetoresistance in Fe3GaTe2-Based 2D van der Waals Heterojunctions

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Abstract
Magnetic tunnel junctions (MTJs) based on van der Waals (vdW) heterostructures with sharp and clean interfaces on the atomic scale are essential for the application of next-generation spintronics. However, the lack of room-temperature intrinsic ferromagnetic crystals with perpendicular magnetic anisotropy has greatly hindered the development of vertical MTJs. The discovery of room-temperature intrinsic ferromagnetic two-dimensional (2D) crystal Fe3GaTe2 has solved the problem and greatly facilitated the realization of practical spintronic devices. Here, we demonstrate a room-temperature MTJ based on a Fe3GaTe2/WS2/Fe3GaTe2 heterostructure for the first time. The tunneling magnetoresistance (TMR) ratio is up to 213% with a high spin polarization of 72% at 10 K, the highest ever reported in Fe3GaTe2-based MTJs up to now. A tunneling spin-valve signal robustly persists at room temperature (300 K) with a bias current down to 10 nA. Moreover, the spin polarization can be modulated by bias current and the TMR shows a sign reversal at a large bias current. Our work sheds light on the potential application of low-energy consumption in all-2D vdW spintronics and offers alternative routes for the electronic control of spintronic devices.
Funding Information
  • National Key Research and Development Program of China (2022YFE0134600)
  • China Postdoctoral Science Foundation (2022M711234)
  • Science, Technology and Innovation Commission of Shenzhen Municipality (JCYJ20180504170444967, JCYJ20210324142010030)
  • Natural Science Foundation of Hubei Province (2022CFA031)
  • National Natural Science Foundation of China (52272152, 61674063, 62074061)

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