Improved Performance of Organic Light-Emitting Transistors Enabled by Polyurethane Gate Dielectric

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Abstract
Organic light-emitting transistors(OLETs) are multifunctionaloptoelectronic devices that combine in a single structure the advantagesof organic light-emitting diodes (OLEDs) and organic field-effecttransistors (OFETs). However, low charge mobility and high thresholdvoltage are critical hurdles to practical OLET implementation. Thiswork reports on the improvements obtained by using polyurethane filmsas a dielectric layer material in place of the standard poly(methylmethacrylate) (PMMA) in OLET devices. It was found that polyurethanedrastically reduces the number of traps in the device, thereby improvingelectrical and optoelectronic device parameters. In addition, a modelwas developed to rationalize an anomalous behavior at the pinch-offvoltage. Our findings represent a step forward to overcome the limitingfactors of OLETs that prevent their use in commercial electronicsby providing a simple route for low-bias device operation.
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Funding Information
  • Instituto Nacional de Ci?ncia e Tecnologia em Eletr?nica Org?nica
  • H2020 LEIT Information and Communication Technologies (101016706, 780839)
  • Ministero dell?Istruzione, dell?Universit? e della Ricerca (ECS_00000033_ECOSISTER)
  • Conselho Nacional de Desenvolvimento Cient?fico e Tecnol?gico (312253/2021-4)
  • Financiadora de Estudos e Projetos
  • Instituto Nacional de Ci?ncia e Tecnologia de Informa??o Qu?ntica
  • Funda??o Carlos Chagas Filho de Amparo ? Pesquisa do Estado do Rio de Janeiro (E-26/200.614/2022, E-26/200.627/2022, E-26/201.023/2021, E-26/210.391/2022)
  • Coordena??o de Aperfei?oamento de Pessoal de N?vel Superior (001)
  • Instituto Nacional de Ci?ncia e Tecnologia em Nanomateriais de Carbono

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