Thin Film Compressive Stresses due to Adatom Insertion into Grain Boundaries
Authors:
- Chun-Wei PaoCPChun-Wei Pao
- Stephen M. FoilesSFStephen M. Foiles
- Edmund B. WebbEWEdmund B. Webb
- David J. SrolovitzDavid J. Srolovitz
- 19 July 2007
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 99 (3) , 036102
Abstract
Atomic simulations of the growth of polycrystalline Ni demonstrate that deposited atoms incorporate into the film at boundaries, resulting in compressive stress generation. Incorporated atoms can also leave the boundaries and thus relieve compressive stress. This leads to a complex interplay between growth stress, adatom incorporation, and surface structure. A simple, theoretical model that accounts for grain size effects is proposed and is in good agreement with simulation results.Keywords
This publication has 20 references indexed in Scilit:
- Effects of surface defects on surface stress of Cu(001) and Cu(111)Physical Review B, 2006
- Compressive Stress in Polycrystalline Volmer-Weber FilmsPhysical Review Letters, 2005
- Reversible stress changes at all stages of Volmer–Weber film growthJournal of Applied Physics, 2004
- Mechanics of compressive stress evolution during thin film growthJournal of the Mechanics and Physics of Solids, 2003
- Intrinsic compressive stress in polycrystalline films with negligible grain boundary diffusionJournal of Applied Physics, 2003
- Reversible Stress Relaxation during Precoalescence Interruptions of Volmer-Weber Thin Film GrowthPhysical Review Letters, 2002
- Origin of Compressive Residual Stress in Polycrystalline Thin FilmsPhysical Review Letters, 2002
- Measurements of stress during vapor deposition of copper and silver thin films and multilayersJournal of Applied Physics, 1996
- Measurements of the intrinsic stress in thin metal filmsVacuum, 1990
- The internal stress in thin silver, copper and gold filmsThin Solid Films, 1985