New Single-Source Precursors for the MOCVD of High-κ Dielectric Zirconium Silicates to Replace SiO2 in Semiconducting Devices
Authors:
- S. ZürcherSZS. Zürcher
- M. MorsteinMMM. Morstein
- M. LembergerMLM. Lemberger
- 4 July 2002
- journal article
- research article
- Published by Wiley in Chemical Vapor Deposition
- Vol. 8 (4) , 171-177