The electrical properties of MIS capacitors with ALN gate dielectrics
Authors:
- T AdamTAT Adam
- J KolodzeyJKJ Kolodzey
- C.P SwannCSC.P Swann
- M.W TsaoMTM.W Tsao
- J.F RaboltJRJ.F Rabolt
- 1 May 2001
- journal article
- Published by Elsevier in Applied Surface Science
- Vol. 175-176, 428-435
Abstract
No abstract availableThis publication has 32 references indexed in Scilit:
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