Stability of transparent zinc tin oxide transistors under bias stress

Shifts in the threshold voltage $\left(\Delta V_{\mathrm{th}}\right)$ of transparent zinc tin oxide (ZTO) transistors under gate bias stress are studied. The effect of composition and processing temperature on the device stability has been investigated. Based on the research, highly stable transistors with $\Delta V_{\mathrm{th}}$ as small as $30\mathrm{mV}$ after $1000\min$ of operation have been fabricated with a composition of $\left[\mathrm{Zn}\right]:\left[\mathrm{Sn}\right]=36:64$ . As current drivers in active matrix displays their stability renders ZTO thin film transistors (TFTs) a very attractive alternative to TFTs based on established technologies.