The electronic and optical properties of III–V binary 2D semiconductors: how to achieve high precision from accurate many-body methods

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Abstract
We tested the precision of accurate many-body GW and BSE methods on seven hexagonal 2D III–V binary semiconductors (BN, BP, BAs, AlN, GaN, GaP, and GaAs), and we provided benchmark electronic and optical properties.
Funding Information
  • Grantová Agentura České Republiky (18-25128S)
  • Ostravská Univerzita v Ostravě (SGS06/PrF/2021, IRP201826)

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