Giant Rashba Splitting in Pb1–xSnxTe (111) Topological Crystalline Insulator Films Controlled by Bi Doping in the Bulk
Open Access
- 17 November 2016
- journal article
- research article
- Published by Wiley in Advanced Materials
- Vol. 29 (3)
Abstract
The topological properties of lead‐tin chalcogenide topological crystalline insulators can be widely tuned by temperature and composition. It is shown that bulk Bi doping of epitaxial Pb1‐xSnxTe (111) films induces a giant Rashba splitting at the surface that can be tuned by the doping level. Tight binding calculations identify their origin as Fermi level pinning by trap states at the surface.Keywords
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