MBE growth of high-quality ZnO films on epi-GaN
Authors:
- Hang Ju KoHKHang Ju Ko
- 1 February 2000
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 209 (4) , 816-821
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Plasma assisted molecular beam epitaxy of ZnO on c -plane sapphire: Growth and characterizationJournal of Applied Physics, 1998
- High temperature excitonic stimulated emission from ZnO epitaxial layersApplied Physics Letters, 1998
- Room temperature excitonic stimulated emission from zinc oxide epilayers grown by plasma-assisted MBEJournal of Crystal Growth, 1998
- Growth of ZnO single crystal thin films on c-plane (0 0 0 1) sapphire by plasma enhanced molecular beam epitaxyJournal of Crystal Growth, 1997
- High quality crystalline ZnO buffer layers on sapphire (001) by pulsed laser deposition for III–V nitridesApplied Physics Letters, 1997
- Optically pumped lasing of ZnO at room temperatureApplied Physics Letters, 1997
- X-ray photoelectron spectroscopy and x-ray diffraction study of the thermal oxide on gallium nitrideApplied Physics Letters, 1997
- Similarities in the bandedge and deep-centre photoluminescence mechanisms of ZnO and GaNSolid State Communications, 1997
- Reflection high-energy electron diffraction oscillations from vicinal surfaces—a new approach to surface diffusion measurementsApplied Physics Letters, 1985