Deposition of ZnO inclined c‐axis on silicon and diamond by r.f. magnetron sputtering

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Abstract
Suitable deposition conditions yielding to thin zinc oxide (ZnO) films with inclined c‐axis have been determined in this work. These films were deposited on silicon (100) and on the nucleation side of self‐standing diamond substrates. We used r.f. magnetron and a zinc‐oxyde target. We characterized by X‐ray diffraction (XRD) the film texture and by scanning electron microscopy (SEM) the film morphology. XRD has revealed that theses films are polycrystalline in nature having a hexagonal wurtzite crystal structure. We have measured a c‐axis angle of inclination of 45° in the case of ZnO/Diamond sample.

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