Inverse Rashba Edelstein THz emission modulation induced by ferroelectricity in CoFeB/PtSe2/MoSe2//LiNbO3 systems
Open Access
- 1 April 2025
- journal article
- Published by AIP Publishing in APL Materials
- Vol. 13 (4)
Abstract
Spintronic terahertz emitters, based on optically triggered spin-to-charge conversion processes, have recently emerged as a novel route toward compact and efficient THz sources. The next challenge for technologically relevant devices, however, remains to modulate the emission with low-energy consumption during operation. In order to achieve this, ferroelectric materials coupled to active spin–orbit layers such as two-dimensional transition metal dichalcogenides are potential candidates. In this work, we present the realization of a large area heterostructure of CoFeB/PtSe2/MoSe2 on a macroscopically bidomain LiNbO3 substrate. Using THz time-domain spectroscopy, we show that the ferroelectric polarization direction induces a sizable modulation of the THz emission. We rationalize these experimental results by using band structure and spin accumulation calculations that are consistent with an interfacial spin-to-charge conversion mediated by the inverse Rashba–Edelstein effect at the MoSe2/PtSe2 interface and being tuned by ferroelectricity in the adjacent LiNbO3 surface. This work demonstrates the relevance and technological potential of field effect spin–orbit architectures for novel THz technologies.Keywords
All Related Versions
Funding Information
- Agence Nationale de la Recherche (ANR-21-CE24-0011, ANR-22-EXP-0003, ANR-22-EXP-0009, ANR-21-ESRE-0025)
- H2020 Future and Emerging Technologies (964735)
This publication has 35 references indexed in Scilit:
- Determining Bandgaps in the Layered Group‐10 2D Transition Metal Dichalcogenide PtSe2Advanced Functional Materials, 2024
- Atomic‐Layer Controlled Transition from Inverse Rashba–Edelstein Effect to Inverse Spin Hall Effect in 2D PtSe2 Probed by THz Spintronic EmissionAdvanced Materials, 2024
- Layer‐controlled nonlinear terahertz valleytronics in two‐dimensional semimetal and semiconductor PtSe2InfoMat, 2023
- Exceptional Spin‐to‐Charge Conversion in Selective Band Topology of Bi/Bi 1‐x Sb x with Spintronic SingularityAdvanced Functional Materials, 2023
- Spin‐Momentum Locking and Ultrafast Spin‐Charge Conversion in Ultrathin Epitaxial Bi1 − xSbx Topological InsulatorAdvanced Science, 2023
- Ultrafast Spin‐Charge Conversion at SnBi2Te4/Co Topological Insulator Interfaces Probed by Terahertz Emission SpectroscopyAdvanced Optical Materials, 2022
- Terahertz Spin‐to‐Charge Conversion by Interfacial Skew Scattering in Metallic BilayersAdvanced Materials, 2021
- 1.4‐mJ High Energy Terahertz Radiation from Lithium NiobatesLaser & Photonics Reviews, 2021
- Current‐Enhanced Broadband THz Emission from Spintronic DevicesAdvanced Optical Materials, 2018
- Terahertz pulse shaping via birefringence in lithium niobate crystalApplied Physics B, 2008