Identification of stress-induced leakage current components and the corresponding trap models in SiO/sub 2/ films
Authors:
- K. SakakibaraKSK. Sakakibara
- N. AjikaNAN. Ajika
- M. HatanakaMHM. Hatanaka
- A. YasuokaAYA. Yasuoka
- 1 June 1997
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 44 (6) , 986-992
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- Characterizing wearout, breakdown, and trap generation in thin silicon oxideJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, 1995
- SiO2 / Si Interface Structures and Reliability CharacteristicsJournal of the Electrochemical Society, 1995
- Properties of high voltage stress generated traps in thin silicon oxides1995
- High field emission related thin oxide wearout and breakdown1994
- Correlation of stress-induced leakage current in thin oxides with trap generation inside the oxidesIEEE Transactions on Electron Devices, 1993
- Impact ionization, trap creation, degradation, and breakdown in silicon dioxide films on siliconJournal of Applied Physics, 1993
- Spatial Distribution of Trapped Holes in the Oxide of Metal Oxide Semiconductor Field-Effect Transistors after Uniform Hot-Hole InjectionJapanese Journal of Applied Physics, 1991
- Hole trapping phenomena in the gate insulator of As-fabricated insulated gate field effect transistorsJournal of Applied Physics, 1990
- Neutral electron trap generation in SiO2 by hot holesApplied Physics Letters, 1990
- Observation of positively charged state generation near the Si/SiO2 interface during Fowler–Nordheim tunnelingJournal of Vacuum Science and Technology, 1982