Smart ultrasonic sensors systems: potential of aluminum nitride thin films for the excitation of the ultrasound at high frequencies
- 1 April 2012
- journal article
- research article
- Published by Springer Nature in Microsystem Technologies
- Vol. 18 (7-8) , 1193-1199
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- BAW resonators based on AlN with Ir electrodes for digital wireless transmissions2008
- Influence of metal electrodes on crystal orientation of aluminum nitride thin filmsVacuum, 2004
- Thick aluminium nitride films deposited by room-temperature sputtering for ultrasonic applicationsUltrasonics, 2004
- Thickness dependence of the properties of highlyc-axis textured AlN thin filmsJournal of Vacuum Science & Technology A, 2004
- Piezoelectric response of thin films determined by charge integration technique: Substrate bending effectsJournal of Applied Physics, 2003
- Piezoelectric aluminum nitride thin films for ultrasonic transducers2001
- Piezoelectric films for 100-MHz ultrasonic transducersThin Solid Films, 2000
- Measurement of piezoelectric coefficients of ferroelectric thin filmsJournal of Applied Physics, 1994
- High frequency, high temperature ultrasonic transducersNDT International, 1990