Nonvolatile resistance switching memory devices fabricated from the photopolymerized poly(N-vinylcarbazole)-graphene oxide composites
Authors:
- 31 October 2016
- journal article
- research article
- Published by Springer Nature in Journal of Materials Science: Materials in Electronics
- Vol. 28 (4) , 3695-3702
Abstract
No abstract availableKeywords
Funding Information
- Science and Technology Commission of Shanghai Municipality (STCSM) (13DZ1108904)
This publication has 38 references indexed in Scilit:
- Isoindigo-Based Donor–Acceptor Conjugated Polymers for Air-Stable Nonvolatile Memory DevicesACS Macro Letters, 2015
- Nonvolatile memory behavior of nanocrystalline cellulose/graphene oxide composite filmsApplied Physics Letters, 2014
- Direct synthesis of highly conductive poly(3,4-ethylenedioxythiophene):poly(4-styrenesulfonate) (PEDOT:PSS)/graphene composites and their applications in energy harvesting systemsNano Research, 2014
- Preparation of highly conductive cathodic membrane with graphene (oxide)/PPy and the membrane antifouling property in filtrating yeast suspensions in EMBRJournal of Membrane Science, 2013
- In Situ Synthesis and Nonvolatile Rewritable‐Memory Effect of Polyaniline‐Functionalized Graphene OxideChemistry – A European Journal, 2013
- Engineering the Electronic Structure of GrapheneAdvanced Materials, 2012
- A high throughput method for preparation of highly conductive functionalized graphene and conductive polymer nanocompositesRSC Advances, 2012
- The Prospective Two-Dimensional Graphene Nanosheets: Preparation, Functionalization and ApplicationsNano-Micro Letters, 2012
- Recent results on organic-based molecular memoriesCurrent Applied Physics, 2011
- Mechanisms for current-induced conductivity changes in a conducting polymerApplied Physics Letters, 2006