Evaluation of temperature dependent electrical transport parameters in Fe3O4/SiO2/n-Si metal–insulator-semiconductor (MIS) type Schottky barrier heterojunction in a wide temperature range
- 2 April 2019
- journal article
- research article
- Published by Springer Nature in Journal of Materials Science: Materials in Electronics
- Vol. 30 (9) , 8955-8966
Abstract
No abstract availableKeywords
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