Atom probe study of Cu2ZnSnSe4 thin-films prepared by co-evaporation and post-deposition annealing
- 28 January 2013
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 102 (4) , 042101
Abstract
We use atom probe tomography (APT) for resolving nanometer scale compositional fluctuations in Cu2ZnSnSe4 (CZTSe) thin-films prepared by co-evaporation and post-deposition annealing. We detect a complex, nanometer–sized network of CZTSe and ZnSe domains in these films. Some of the ZnSe domains contain precipitates having a Cu- and Sn-rich composition, where the composition cannot be assigned to any of the known equilibrium phases. Furthermore, Na impurities are found to be segregated at the CZTSe/ZnSe interface. The insights given by APT are essential for understanding the growth of CZTSe absorber layers for thin-film solar cells and for optimizing their optoelectronic properties.Keywords
Funding Information
- Deutsche Forschungsgemeinschaft (CH 943/2-1)
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