Lattice relaxation of InAs heteroepitaxy on GaAs
Authors:
- 1 February 1987
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 81 (1-4) , 237-242
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
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- Instabilities of (110) III–V compounds grown by molecular beam epitaxyJournal of Vacuum Science & Technology B, 1983
- Nucleation and strain relaxation at the InAs/GaAs(100) heterojunctionJournal of Vacuum Science & Technology B, 1983
- Determination of the lattice constant of epitaxial layers of III-V compoundsJournal of Crystal Growth, 1978
- Elastic strain and misfit dislocation density in Si0.92Ge0.08 films on silicon substratesThin Solid Films, 1977