Quantitative XPS analysis considering elastic scattering

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Abstract
Up to now the equations for both quantitative XPS analysis and those for the determination of reduced thicknesses of thin overlayers have been derived according to the assumption of a well‐defined photoelectron escape length. Escape length distributions are caused by a variety of influences. The consequences of this are demonstrated by the example of thin overlayers. Additionally, an approximation is developed which accounts for elastic electron scattering. The ratio Λ/λ el of mean free path is the characteristic quantity of this approximation, which is quantified by comparison of Monte Carlo calculations and thin film experiments. This approximation allows us to conclude that elastic electron scattering does not influence quantitative XPS analysis, so long as it is performed without any kind of references.

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