Structure and defect chemistry of grain boundaries in CuInSe2

This publication has 19 references indexed in Scilit:

• Interface-bond-polarity model for semiconductor heterojunction band offsets
  Physical Review B, 1990
• Abinitiodetermination of the structure of a grain boundary by simulated quenching
  Physical Review Letters, 1987
• Theoretical study of the electronic structure of the incoherent {211} Σ=3 grain boundary in Ge by the recursion approach
  Physical Review B, 1987
• Atomic structure of grain boundaries in semiconductors
  Revue de Physique Appliquée, 1987
• A survey of the geometrical reconstruction of [011] defects in semiconductors: Grain boundaries and dislocations
  Scripta Metallurgica, 1985
• Valence Bands of the Cu—III—VI₂ Chalcopyrites Studied by Photoemission Spectra, X‐Ray Emission Spectra, and Electronic Structure Calculations
  Physica Status Solidi (b), 1984
• Electronic structure of the ternary chalcopyrite semiconductors CuAl${\mathrm{S}}_2$, CuGa${\mathrm{S}}_2$, CuIn${\mathrm{S}}_2$, CuAl${\mathrm{Se}}_2$, CuGa${\mathrm{Se}}_2$, and CuIn${\mathrm{Se}}_2$
  Physical Review B, 1983
• The structure of second and third order twin boundaries in silicon
  Scripta Metallurgica, 1983
• Impurity States in CuInSe₂
  Crystal Research and Technology, 1981
• Crystal data for CuInSe₂
  Journal of Applied Crystallography, 1973