Low-Temperature Polycrystalline Silicon Thin-Film Transistors and Circuits on Flexible Substrates
Authors:
- P.C. van der WiltPWP.C. van der Wilt
- M.G. KaneMKM.G. Kane
- A.B. LimanovALA.B. Limanov
- A.H. FiresterAFA.H. Firester
- L. GoodmanLGL. Goodman
- J. LeeJLJ. Lee
- J.R. AbelsonJAJ.R. Abelson
- A.M. ChituACA.M. Chitu
- James S. ImJIJames S. Im
- 1 June 2006
- journal article
- Published by Springer Nature in MRS Bulletin
- Vol. 31 (6) , 461-465
Abstract
Low-defect-density polycrystalline Si on flexible substrates can be instrumental in realizing the full potential of macroelectronics. Direct deposition or solid-phase crystallization techniques are often incompatible with polymers and produce materials with high defect densities. Excimer-laser annealing is capable of producing films of reasonable quality directly on polymer and metallic substrates. Sequential lateral solidification (SLS) is an advanced pulsed-laser-crystallization technique capable of producing Si films on polymers with lower defect density than can be obtained via excimer-laser annealing. Circuits built directly on polymers using these SLS films show the highest performance reported to date.Keywords
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