Room-temperature continuous-wave operation of GaN-based vertical-cavity surface-emitting lasers with n-type conducting AlInN/GaN distributed Bragg reflectors
Authors:
- 1 September 2016
- journal article
- Published by IOP Publishing in Applied Physics Express
- Vol. 9 (10) , 102101
Abstract
The room-temperature continuous-wave operation of a 1.5λ-cavity GaN-based vertical-cavity surface-emitting laser with an n-type conducting AlInN/GaN distributed Bragg reflector (DBR) was achieved. A peak reflectivity of over 99.9% was obtained in the n-type conducting AlInN/GaN DBR so that the current was injected through the DBR for the operation. The threshold current was 2.6 mA, corresponding to the threshold current density of 5.2 kA/cm2, and the operating voltage was 4.7 V. A lasing spectrum with a peak wavelength of 405.1 nm and a full-width at half maximum of 0.08 nm was also observed.Keywords
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