Boron atom distributions in ion-implanted silicon by the (n,4He) nuclear reaction
Authors:
- 1 July 1972
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 21 (1) , 16-17
Abstract
The concentration distribution of 10B atoms ion‐implanted into silicon has been determined with a new nuclear reaction technique, The concentration profiles for implantations in the energy range 40–500 keV were determined before and after annealing at 900 °C for 30 min and show that enhanced diffusion, because of radiation damage, is of minor importance. The profile ranges and widths have been compared to LSS theory and to other experiments.Keywords
This publication has 4 references indexed in Scilit:
- Stopping Cross Sections for 0.3- to 1.7-MeV Helium Ions in Silicon and Silicon DioxideJournal of Applied Physics, 1971
- The Influence of the Amorphous Phase on Ion Distributions and Annealing Behavior of Group III and Group V Ions Implanted into SiliconJournal of the Electrochemical Society, 1971
- Range and stopping-power tables for heavy ionsAtomic Data and Nuclear Data Tables, 1970
- Alpha-Particle Stopping Cross Section in Solids from 400 keV to 2 MeVPhysical Review B, 1969