Characterization of Single-Event Burnout in Power MOSFET Using Backside Laser Testing
Authors:
- F. Prud'HOmmeFPF. Prud'HOmme
- P. PoirotPPP. Poirot
- R. GaillardRGR. Gaillard
- N. BuardNBN. Buard
- T. CarriereTCT. Carriere
- 19 December 2006
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 53 (6) , 3145-3152
Abstract
This paper presents a new methodology based upon backside laser irradiations to characterize the sensitivity of power devices towards Single-Event Burnout. It is shown that this technique can be used to define the safe operating areaKeywords
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