Fabrication and characterisation of NiO/ZnO structures
Authors:
- J.M NelJ.M Nel
- F.D AuretFAF.D Auret
- W.E MeyerWMW.E Meyer
- 1 June 2004
- journal article
- research article
- Published by Elsevier in Sensors and Actuators B: Chemical
- Vol. 100 (1-2) , 270-276
Abstract
No abstract availableKeywords
This publication has 16 references indexed in Scilit:
- Schottky diode with Ag on (112̄0) epitaxial ZnO filmApplied Physics Letters, 2002
- The influence of high energy proton bombardment on the electrical and defect properties of single-crystal ZnOJournal of Physics: Condensed Matter, 2001
- Processing-induced electron traps in n-type GaNMaterials Science and Engineering: B, 2001
- ZnO Schottky ultraviolet photodetectorsJournal of Crystal Growth, 2001
- ZnO diode fabricated by excimer-laser dopingApplied Physics Letters, 2000
- ZnO Grain Boundaries: Electrical Activity and DiffusionJournal of Electroceramics, 1999
- Optically pumped lasing of ZnO at room temperatureApplied Physics Letters, 1997
- Deep Level Transient Spectroscopy Depth Profile Measurements of Polycrystalline Zinc Oxide CeramicJapanese Journal of Applied Physics, 1996
- The Luminescence of ZnO under High One‐ and Two‐Quantum ExcitationPhysica Status Solidi (b), 1975
- Metal-semiconductor surface barriersSolid-State Electronics, 1966