Behavior of Disordered Boron Carbide under Stress
- 19 July 2006
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 97 (3) , 035502
Abstract
Gibbs free-energy calculations based on density functional theory have been used to determine the possible source of failure of boron carbide just above the Hugoniot elastic limit (HEL). A range of polytypes is found to be stable at room pressure. The energetic barrier for shock amorphization of boron carbide is by far the lowest for the polytype, requiring only for collapse under hydrostatic conditions. The results clearly demonstrate that the collapse of the phase leads to segregation of and amorphous carbon in the form of 2–3 nm bands along the (113) lattice direction, in excellent agreement with recent transmission electron microscopy results.
Keywords
This publication has 21 references indexed in Scilit:
- Evidence for multiple polytypes of semiconducting boron carbide (C2B10) from electronic structureJournal of Physics D: Applied Physics, 2005
- Structural damage in boron carbide under contact loadingActa Materialia, 2004
- Dynamic behavior of boron carbideJournal of Applied Physics, 2004
- Shock-Induced Localized Amorphization in Boron CarbideScience, 2003
- Shock–induced brittle failure of boron carbideProceedings of the Royal Society A: Mathematical, Physical and Engineering Sciences, 2002
- Atomic Structure of IcosahedralBoron Carbide from a First Principles Analysis of NMR SpectraPhysical Review Letters, 2001
- IR-Active Phonons and Structure Elements of Isotope-Enriched Boron CarbideJournal of Solid State Chemistry, 2000
- Response of boron carbide subjected to large strains, high strain rates, and high pressuresJournal of Applied Physics, 1999
- Shock-wave compression of brittle solidsMechanics of Materials, 1998
- Boron carbide—A comprehensive reviewJournal of the European Ceramic Society, 1990