Lamellar and Grain Boundary Models for the Electrical Properties of Post-Oxidized ITO Films
Author:
- Mamoru MizuhashiMMMamoru Mizuhashi
- 1 April 1983
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 22 (4R)
Abstract
A very distinctive feature of the resistivity change during the course of heat treatment in air and a rather weak dependence on the impurity concentration are described on the basis of the diffusion of oxygen and the formation of highly resistive grain boundary.Keywords
This publication has 3 references indexed in Scilit:
- Electrical properties of post-oxidized In2O3:Sn filmsThin Solid Films, 1981
- Electrical properties of vacuum-deposited indium oxide and indium tin oxide filmsThin Solid Films, 1980
- Electron concentration and mobility in In2O3Journal of Physics and Chemistry of Solids, 1977