Submicron metal–semiconductor–metal ultraviolet detectors based on AlGaN grown on silicon: Results and simulation
Authors:
- 21 October 2002
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 92 (9) , 5602-5604
Abstract
Solar blind metal–semiconductor–metal detectors have been fabricated based on AlGaN grown on Si by molecular-beam epitaxy. Submicron finger spacings were obtained by electron-beam lithography, and allowed us to demonstrate a significant improvement of the responsivity and the spectral selectivity. These results were explained by numerical two-dimensional calculations of the electric-field distribution. The simulation also explained the dependence of the response on applied bias.Keywords
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