Germanium and Silicon Nanocrystal Thin-Film Field-Effect Transistors from Solution
- 9 June 2010
- journal article
- letter
- Published by American Chemical Society (ACS) in Nano Letters
- Vol. 10 (7) , 2661-2666
Abstract
Germanium and silicon have lagged behind more popular II−VI and IV−VI semiconductor materials in the emerging field of semiconductor nanocrystal thin film devices. We report germanium and silicon nanocrystal field-effect transistors fabricated by synthesizing nanocrystals in a plasma, transferring them into solution, and casting thin films. Germanium devices show n-type, ambipolar, or p-type behavior depending on annealing temperature with electron and hole mobilities as large as 0.02 and 0.006 cm2 V−1 s−1, respectively. Silicon devices exhibit n-type behavior without any postdeposition treatment, but are plagued by poor film morphology.Keywords
This publication has 39 references indexed in Scilit:
- Structural, Optical, and Electrical Properties of PbSe Nanocrystal Solids Treated Thermally or with Simple AminesJournal of the American Chemical Society, 2008
- Solution-processed silicon films and transistorsNature, 2006
- PbSe Nanocrystal Solids for n- and p-Channel Thin Film Field-Effect TransistorsScience, 2005
- Coulomb Blockade and Hopping Conduction in PbSe Quantum DotsPhysical Review Letters, 2005
- Field-effect transistor based on organosoluble germanium nanoclustersApplied Organometallic Chemistry, 2005
- Growth and transport properties of complementary germanium nanowire field-effect transistorsApplied Physics Letters, 2004
- Germanium nanowire field-effect transistors with SiO2 and high-κ HfO2 gate dielectricsApplied Physics Letters, 2003
- High-performance thin-film transistors using semiconductor nanowires and nanoribbonsNature, 2003
- Transport properties of annealed CdSe colloidal nanocrystal solidsJournal of Applied Physics, 2002
- All-Inorganic Field Effect Transistors Fabricated by PrintingScience, 1999