Enhanced Thermoelectric Performance of GeTe‐Sb 2 Te 3 Pseudo‐Binary Phase Change Material Through Stoichiometry Optimization
Open Access
- 12 October 2026
- journal article
- research article
- Published by Wiley in Advanced Electronic Materials
- Vol. 12 (20) , e70609
Abstract
Pseudo‐Binary GeTe‐Sb 2 Te 3 materials have demonstrated promising thermoelectric performance in intermediate temperature (500‐800 K) range. In this work, by co‐sputtering of Ge 45 Te 52 S 3 and Sb 2 Te 3 a composition spreads with varying Ge:Sb:Te ratios were fabricated to identify specific composition regimes with the highest thermoelectric performance. From the thermoelectric measurements, (Ge 5 Sb 37 Te 58 ) demonstrated the highest power factor values. Thermal conductivity measurements were performed on the different compositions with higher power factor values. Maximum zT values ranging from 0.36 ± 0.08 to 0.81 ± 0.15 for samples Ge 9 Sb 33 Te 58 to Ge 5 Sb 37 Te 58 at 300°C were achieved. The co‐sputtering technique establishes an effective high‐throughput approach to systematically map the relationship between composition and thermoelectric properties across a wide range of compositions in a single deposition run.Keywords
Funding Information
- Engineering and Physical Sciences Research Council (EP/T026219/1)
- Agency for Science, Technology and Research
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