Energy efficient spintronic devices based on 2D electron and hole gases arising at oxide/oxide interfaces
Open Access
- 20 October 2025
- journal article
- Published by IOP Publishing in Journal of Physics: Condensed Matter
- Vol. 37 (42) , 421501
Abstract
This perspective article explores the potential of two-dimensional electron and hole gases at oxide/oxide interfaces as promising conduction channels in energy-efficient spintronic devices for memory and logic applications. Magneto-electric and ferro-electric device architectures are considered, highlighting their advantages in integrating non-volatility with ultra-fast switching capabilities. We emphasize the significance of spin–orbit coupling in generating robust spin currents and examine how the Rashba and inverse Edelstein effects can be harnessed in device operations. Specific heterostructures, including HfO2/SrTiO3, Cr2O3/TiO2-x, and ZrO2-x-based systems, are reviewed in terms of their material properties, interface stability, and suitability for practical implementation.Keywords
Funding Information
- National Science Foundation (2425609)
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