Spin dependent charge pumping in SiC metal-oxide-semiconductor field-effect-transistors
Authors:
- 22 August 2011
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 99 (8) , 083504
Abstract
We demonstrate a very powerful electrically detected magnetic resonance (EDMR) technique, spin dependent charge pumping (SDCP) and apply it to 4H SiC metal-oxide-semiconductor field-effect-transistors. SDCP combines a widely used electrical characterization tool with the most powerful analytical technique for providing atomic scale structure of point defects in electronic materials. SDCP offers a large improvement in sensitivity over the previously established EDMR technique called spin dependent recombination, offering higher sensitivity and accessing a wider energy range within the bandgap.Keywords
This publication has 15 references indexed in Scilit:
- An electrically detected magnetic resonance study of performance limiting defects in SiC metal oxide semiconductor field effect transistorsJournal of Applied Physics, 2011
- The Effect of Nitridation on SiC MOS Oxides as Evaluated by Charge PumpingMaterials Science Forum, 2008
- Time Dependence of Bias-Stress-Induced SiC MOSFET Threshold-Voltage Instability MeasurementsIEEE Transactions on Electron Devices, 2008
- Electrical Detection of Spin Pumping due to the Precessing Magnetization of a Single FerromagnetPhysical Review Letters, 2006
- Structure of 6H silicon carbide/silicon dioxide interface trapping defectsApplied Physics Letters, 2004
- Status and prospects for SiC power MOSFETsIEEE Transactions on Electron Devices, 2002
- A reliable approach to charge-pumping measurements in MOS transistorsIEEE Transactions on Electron Devices, 1984
- Explanation of the large spin-dependent recombination effect in semiconductorsJournal de Physique Lettres, 1978
- Spin-Dependent Recombination on Silicon SurfacePhysical Review B, 1972
- Charge pumping in MOS devicesIEEE Transactions on Electron Devices, 1969