Quantification of the dielectric constant of MoS2 and WSe2 Nanosheets by electrostatic force microscopy
Authors:
- Yaoping HouYHYaoping Hou
- Guorui WangGWGuorui Wang
- Chengfu MaCMChengfu Ma
- Zhihua FengZFZhihua Feng
- Yuhang ChenYCYuhang Chen
- Tobin FilleterTFTobin Filleter
- 18 September 2022
- journal article
- research article
- Published by Elsevier in Materials Characterization
- Vol. 193
Abstract
No abstract availableKeywords
Funding Information
- National Natural Science Foundation of China
This publication has 38 references indexed in Scilit:
- Investigation of the optical properties of MoS2 thin films using spectroscopic ellipsometryApplied Physics Letters, 2014
- Electrically tunable excitonic light-emitting diodes based on monolayer WSe2 p–n junctionsNature Nanotechnology, 2014
- Ultrasensitive photodetectors based on monolayer MoS2Nature Nanotechnology, 2013
- Label-free identification of single dielectric nanoparticles and viruses with ultraweak polarization forcesNature Materials, 2012
- Quantifying the dielectric constant of thick insulators by electrostatic force microscopy: effects of the microscopic parts of the probeNanotechnology, 2012
- Single-layer MoS2 transistorsNature Nanotechnology, 2011
- Determination of the nanoscale dielectric constant by means of a double pass method using electrostatic force microscopyJournal of Applied Physics, 2009
- Ab initio calculations of plasmons and interband transitions in the low-loss electron energy-loss spectrumJournal of Electron Spectroscopy and Related Phenomena, 2005
- Electrostatic forces in atomic force microscopyPhysical Review B, 2002
- Evaluation of the capacitive force between an atomic force microscopy tip and a metallic surfaceThe European Physical Journal B, 1998