Silicon-to-silicon anodic bonding with a borosilicate glass layer
Authors:
- A HanneborgAHA Hanneborg
- M NeseMNM Nese
- P OhlckersPOP Ohlckers
- 1 September 1991
- journal article
- Published by IOP Publishing in Journal of Micromechanics and Microengineering
- Vol. 1 (3) , 139-144
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- A capacitive silicon pressure sensor with low TCO and high long-term stabilitySensors and Actuators A: Physical, 1990
- Interface charge control of directly bonded silicon structuresJournal of Applied Physics, 1989
- Bonding of silicon wafers for silicon-on-insulatorJournal of Applied Physics, 1988
- An integrated capacitive pressure sensor with frequency-modulated outputSensors and Actuators, 1986
- Wafer bonding for silicon-on-insulator technologiesApplied Physics Letters, 1986
- Development of a miniature pressure transducer for biomedical applicationsIEEE Transactions on Electron Devices, 1979
- Field Assisted Glass SealingActive and Passive Electronic Components, 1975
- Electron‐Microprobe Study of Field‐Assisted Bonding of Glasses to MetalsJournal of the American Ceramic Society, 1973
- Low-Temperature Electrostatic Silicon-to-Silicon Seals Using Sputtered Borosilicate GlassJournal of the Electrochemical Society, 1972
- Field Assisted Glass-Metal SealingJournal of Applied Physics, 1969