High performance, excellent reliability multifunctional graphene oxide doped memristor achieved by self-protect ive compliance current structure

Authors:

1 December 2014

conference paper
Published by Institute of Electrical and Electronics Engineers (IEEE)

No. 01631918,p. 33.3.1-33.3.4
DOI:10.1109/iedm.2014.7047161

Abstract

Double-ended graphene oxide (GO) doped silicon oxide based (SOB) via-structure RRAM with self-protective ability is reported in this paper. The fabricated RRAM exhibits comprehensive outstanding performance including switching speed (~30ns), endurance property (>10 ¹² cycles), read disturbance immunity (>10 ¹⁰ cycles) and retention (>10 ⁴ s at 125°C, >144 days at room temperature). Combined with the applicability of complementary resistive switching structure and whole-cycle multi-bit operation, it is quite promising for this RRAM to be applied in future mass productions.

Keywords

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