A Semi-empirical tight-binding theory of the electronic structure of semiconductors†
Authors:
- P. VoglPVP. Vogl
- Harold P. HjalmarsonHHHarold P. Hjalmarson
- John D. DowJDJohn D. Dow
- 1 January 1983
- journal article
- Published by Elsevier in Journal of Physics and Chemistry of Solids
- Vol. 44 (5) , 365-378
Abstract
No abstract availableThis publication has 38 references indexed in Scilit:
- Deep energy levels for defects at the AlAs (110) surfaceApplications of Surface Science, 1982
- Theory of core excitonsPhysical Review B, 1981
- Theory of deep substitutional s p3-bonded impurity levels and core excitons at semiconductor interfacesJournal of Vacuum Science and Technology, 1980
- Energy levels of semiconductor surface vacanciesJournal of Vacuum Science and Technology, 1980
- Electronic properties of the AlAs-GaAs (001) interface and superlatticePhysical Review B, 1979
- Lithium local-orbital energy bands using Kohn-Sham and near-Hartree-Fock exchangePhysical Review B, 1977
- Nonlocal pseudopotential calculations for the electronic structure of eleven diamond and zinc-blende semiconductorsPhysical Review B, 1976
- Defects in epitaxial multilayersJournal of Crystal Growth, 1975
- Roothaan-Hartree-Fock atomic wavefunctionsAtomic Data and Nuclear Data Tables, 1974
- Average-energy-of-configuration Hartree-Fock results for the atoms helium to radon charlotte froese fischerAtomic Data and Nuclear Data Tables, 1972