Direct Observation of Localized Radial Oxygen Migration in Functioning Tantalum Oxide Memristors
- 2 February 2016
- journal article
- research article
- Published by Wiley in Advanced Materials
- Vol. 28 (14) , 2772-2776
Abstract
Oxygen migration in tantalum oxide, a promising next-generation storage material, is studied using in operando X-ray absorption spectromicroscopy. This approach allows a physical description of the evolution of conduction channel and eventual device failure. The observed ring-like patterns of oxygen concentration are modeled using thermophoretic forces and Fick diffusion, establishing the critical role of temperature-driven oxygen migration.Keywords
All Related Versions
This publication has 42 references indexed in Scilit:
- In situ observation of filamentary conducting channels in an asymmetric Ta2O5−x/TaO2−x bilayer structureNature Communications, 2013
- First principles modeling of charged oxygen vacancy filaments in reduced TiO 2 –implications to the operation of non-volatile memory devicesMathematical and Computer Modelling, 2013
- Physical electro-thermal model of resistive switching in bi-layered resistance-change memoryScientific Reports, 2013
- Anatomy of a Nanoscale Conduction Channel Reveals the Mechanism of a High‐Performance MemristorAdvanced Materials, 2011
- The switching location of a bipolar memristor: chemical, thermal and structural mappingNanotechnology, 2011
- A High Resolution, Hard X-ray Bio-imaging Facility at SSRLSynchrotron Radiation News, 2008
- Bonding properties and their relation to residual stress and refractive index of amorphous Ta(N,O) films investigated by x-ray absorption spectroscopyApplied Physics Letters, 2005
- The formation of metal–oxygen species at low temperaturesJournal of Vacuum Science & Technology A, 1990
- Photoemission studies of the low-temperature reaction of metals and oxygenPhysical Review B, 1990
- The identification of peroxy‐features at polymer surfaces by ESCAJournal of Polymer Science: Polymer Chemistry Edition, 1981