Technique for lateral temperature profiling in optoelectronic devices using a photoluminescence microprobe
Authors:
- 27 July 1992
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 61 (4) , 384-386
Abstract
A photoluminescence microprobe technique with ≤0.2 °C and <5 μm resolution is demonstrated for measuring lateral temperature profiles in GaAs-based optoelectronic devices. The technique is used to measure the junction-heating induced temperature gradient in both single-stripe and broad-area diode lasers. The effective focal length of the thermally induced refractive index gradient lens is determined from the temperature gradient in a broad-area device.Keywords
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