Facile Encapsulation of Oxide based Thin Film Transistors by Atomic Layer Deposition based on Ozone
- 17 April 2013
- journal article
- research article
- Published by Wiley in Advanced Materials
- Vol. 25 (20) , 2821-2825
Abstract
A simplified encapsulation strategy for metal-oxide based TFTs, using ozone instead of water as an oxygen source in a low-temperature ALD process is demonstrated. Thereby, the threshold voltage remains unaltered and the hysteresis is permanently reduced. Costly energy- and time-consuming post-treatment processes can be avoided. This concept is widely applicable to various encapsulation materials (e.g., Al2O3, TiO2, ZrO2) and metal-oxide channel semiconductors (e.g., zinc–tin–oxide (ZTO), indium–gallium–zinc–oxide (IGZO)).Keywords
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